Micron’s LPDDR5x DRAM Further Achieves 4% Power Savings While Maintaining 9.6 Gbps Speeds

Micron’s LPDDR5x DRAM Further Achieves 4% Power Savings While Maintaining 9.6 Gbps Speeds

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Micron’s LPDDR5x DRAM Further Achieves 4% Power Savings While Maintaining 9.6 Gbps Speeds
Micron's LPDDR5x DRAM Further Achieves 4% Power Savings While Maintaining 9.6 Gbps Speeds 1

Micron has announced further power savings of its LPDDR5x DRAM solution for smartphones that runs at a blistering fast speed of 9.6 Gbps.

Micron announced its LPDDR5x memory last year which was sampled for next-generation smart-phones. The same technology was also incorporated in LPCAMM2 memory modules for laptops & offered 9.6 Gbps speeds with up to 64 GB capacities. Today, Micron announced that the company has achieved a further 4% power savings thanks to optimizations made to the 1ß node utilized by the LPDDR5x memory.

Press Release: We have again pushed the boundaries further with an improved 9.6 Gbps LPDDR5X memory solution, which we are currently sampling to the mobile ecosystem. Benefits include sustained high-bandwidth capabilities for AI-intensive applications and further improved power efficiency. When it comes to battery life, every minute that the end user gains is a win.

For our latest 9.6 Gbps memory solution, we deliver an additional 4% power savings compared to our previous generation, which was already delivering best-in-class power. To put this power savings into perspective, a leading flagship smartphone vendor claims to deliver 23 hours of video playback. If every component in a handset reduced power by 4%, end users would gain an additional hour of video playback, bringing the total playback potential to 24 hours. That would be the equivalent of enjoying two more episodes of your favorite streaming show before needing to connect your device to power.

Our first-to-market 1ß (1-beta) process node has advanced power-saving capabilities that utilize enhanced dynamic voltage and frequency scaling core (eDVFSC) techniques and second-generation high-k metal gate (HKMG) technology to unlock unprecedented power savings.

This advanced technology delivers significant power improvements and the flexibility to deliver workload-customized power and performance. In addition to power savings, the 1β process node provides over 12% higher peak bandwidth. These power and bandwidth improvements accelerate efficient and effective AI experiences at the edge. The features of the process node include:

  • Advanced pattern multiplication lithography
  • Extends LPDDR5 leadership
  • Delivers improved power and performance
  • Now shipping samples of 9.6Gbps with further improved power savings
  • Based on consumer research, smartphone battery life is the top pain point for end users and is a critical area for improvement among smartphone manufacturers. 71% of smartphone users stated that battery life is the most important feature they consider when purchasing a new phone. Battery life easily outpaces other key features such as the durability of the device (61%), camera quality (48%), and 5G connection (24%).

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